Please use this identifier to cite or link to this item:
http://dspace.nuph.edu.ua/handle/123456789/10068| Title: | Graded-gap AlInN Gunn diodes |
| Other Titles: | Варизонные AlInN диоды Ганна |
| Authors: | Storozhenko, I. P. Yaroshenko, A. N. Kaydash, M. V. Стороженко, И. П. Стороженко, І. П. Ярошенко, А. Н. Кайдаш, М. В. |
| Keywords: | Gunn diod;transfer electron device;graded-gap semiconducto;nitride semiconductor;intervalley electron transfer;terahertz range |
| Issue Date: | 2012 |
| Bibliographic description (Ukraine): | Storozhenko, I. P. Graded-gap AlInN Gunn diodes / I. P. Storozhenko, A. N. Yaroshenko, M. V. Kaydash // Semiconductor Physics, Quantum Electronics & Optoelectronics. - 2012. - Vol. 15, № 2. - P. 176-180. |
| Abstract: | The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes. |
| URI: | http://dspace.nuph.edu.ua/handle/123456789/10068 |
| Appears in Collections: | Наукові публікації кафедри фундаментальних та суспільно-гуманітарних наук |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| st_095.pdf | 1,39 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.